Dechanneling processes for electrons based on the solution of Fokker-Planck equation have been studied. The dynamics of particle distribution density in depth of Crystal has been investigated in dependence on both energy and initial scattering distribution of electron beams. The influence of dechanneling process on spectral intensity of channeling radiation for electrons in crystals is investigated.
| Published in |
American Journal of Modern Physics (Volume 4, Issue 3-1)
This article belongs to the Special Issue Many Particle Simulations |
| DOI | 10.11648/j.ajmp.s.2015040301.21 |
| Page(s) | 48-52 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2015. Published by Science Publishing Group |
Channeling Radiation, Fokker-Planck Equation, Dechanneling, Radiation Spectra
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APA Style
Hamid Shafeghat, Alireza Abbasnia, Saeed Mohammadi. (2015). Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals. American Journal of Modern Physics, 4(3-1), 48-52. https://doi.org/10.11648/j.ajmp.s.2015040301.21
ACS Style
Hamid Shafeghat; Alireza Abbasnia; Saeed Mohammadi. Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals. Am. J. Mod. Phys. 2015, 4(3-1), 48-52. doi: 10.11648/j.ajmp.s.2015040301.21
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Download@article{10.11648/j.ajmp.s.2015040301.21,
author = {Hamid Shafeghat and Alireza Abbasnia and Saeed Mohammadi},
title = {Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals},
journal = {American Journal of Modern Physics},
volume = {4},
number = {3-1},
pages = {48-52},
doi = {10.11648/j.ajmp.s.2015040301.21},
url = {https://doi.org/10.11648/j.ajmp.s.2015040301.21},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.s.2015040301.21},
abstract = {Dechanneling processes for electrons based on the solution of Fokker-Planck equation have been studied. The dynamics of particle distribution density in depth of Crystal has been investigated in dependence on both energy and initial scattering distribution of electron beams. The influence of dechanneling process on spectral intensity of channeling radiation for electrons in crystals is investigated.},
year = {2015}
}
TY - JOUR T1 - Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals AU - Hamid Shafeghat AU - Alireza Abbasnia AU - Saeed Mohammadi Y1 - 2015/05/16 PY - 2015 N1 - https://doi.org/10.11648/j.ajmp.s.2015040301.21 DO - 10.11648/j.ajmp.s.2015040301.21 T2 - American Journal of Modern Physics JF - American Journal of Modern Physics JO - American Journal of Modern Physics SP - 48 EP - 52 PB - Science Publishing Group SN - 2326-8891 UR - https://doi.org/10.11648/j.ajmp.s.2015040301.21 AB - Dechanneling processes for electrons based on the solution of Fokker-Planck equation have been studied. The dynamics of particle distribution density in depth of Crystal has been investigated in dependence on both energy and initial scattering distribution of electron beams. The influence of dechanneling process on spectral intensity of channeling radiation for electrons in crystals is investigated. VL - 4 IS - 3-1 ER -
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